Use of Raw Organic Cow Milk for Memory Application: An Update

In this chapter, milk samples with varying fat content, including low-fat, medium-fat, and full-cream, were utilized to establish a comparative analysis.

Electronic waste (e-waste) is generated through dumping of unused electronic devices. More of these wastes are ending up in dumping yards and recycling centers, posing a new challenge to the environment and policy makers as well. Organic material-based computer memory devices are critical for lowering the amount of electronic waste. This chapter reports devices consisting of fat-free, medium cream, and full cream raw cow milk active layers sandwiched between indium-doped tin oxide and silver electrodes. These gadgets were made without the use of heat or power and do not harm the environment. The medium-fat milk film had a higher weight percentage of metallic ions than the fat-free and full-cream milk films, according to energy-dispersive X-ray spectroscopy analysis of the active layers. As a result, electrical characterization and memory studies revealed that conductive filaments driven by a space-charge-limited conduction mechanism were responsible for the “S-type” memory characteristics of the medium-fat milk-based device, with switching at low VSET = +0.48 V and VRESET
=-0.25 V. Furthermore, with over 30 write/erase cycles, this device demonstrated better non-volatile computer memory device prospects. According to the findings of our investigation, the metallic ions naturally present in milk have a substantial impact on how well the ReRAM device made from cow milk functions. As a result, milk's compatibility for ReRAM technology can be tailored using the dispersion of conductive nanoparticles inside it, allowing for further customization.